Samsungg has announced the launch of its third generation of HBM2E memories, or “2E high-bandwidth memories”, in the form of chips with 16 GB of capacity each, that is, double that of the previous generation, and with more performance. These chips are aimed at high-performance systems such as supercomputers , advanced processing systems or equipment focused on Artificial Intelligence. We were able to know the first details in the GTC 2019 and now they are a reality.
With those 16 GB, the third generation of HBM2E memories, codenamed “Flashbolt” doubles the capacity of the company’s previous HBM2 memory modules, which had a maximum of 8GB per chip. We also found performance improvements thanks to the use of a manufacturing process of 10 nanometers and the incorporation of 16 Gigabits of DRAM memory as a buffer in each of the chips placed vertically.
Communication between layers is carried out through small vertical microchannels, specifically, each HBM2E chip includes 40,000 of these connections, with about 5,600 per layer.
The performance that these chips can achieve HBM2E it reaches 4.2 Gbps with a memory width of 538 GB/s, although the first models work at 3.2 Gbps with 410 GB/s for each module.
The arrival of the first mass-produced chips will take place before the middle of this year and will coexist with the second generation HMB2 codenamed “Aquabolt”.